SPU18P06P

Infineon Technologies

SPU18P06P

Analog & Power

MOSFET P-CH 60V 18.6A TO251-3

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs130mOhm @ 13.2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesSIPMOS®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18.6A (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackagePG-TO251-3