Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | SIPMOS® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.7A (Ta) |
| Max Power Dissipation | 81.1W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Supplier Device Package | PG-TO263-3-1 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|