SPA20N60C3

Infineon Technologies

SPA20N60C3

Analog & Power

MOSFET N-CH 600V 20.7A TO220-111

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C20.7A (Tc)
Max Power Dissipation34.5W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackagePG-TO220-3-111

Environmental

Operating Temperature-55°C~150°C(TJ)