IST026N10NM5AUMA1

Infineon Technologies

IST026N10NM5AUMA1

Datasheet

Analog & Power

TRENCH >=100V PG-HSOF-5

Active5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.6mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6300 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 148µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C27A (Ta), 248A (Tc)
Max Power Dissipation3.8W (Ta), 313W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-1

Environmental

Operating Temperature-55°C ~ 175°C (TJ)