IST015N06NM5AUMA1

Infineon Technologies

IST015N06NM5AUMA1

Datasheet

Analog & Power

OPTIMOS 5 POWER MOSFET 60 V

Active5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 95µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 242A (Tc)
Max Power Dissipation3.8W (Ta), 167W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-1

Environmental

Operating Temperature-55°C~175°C(TJ)