IST006N04NM6AUMA1

Infineon Technologies

IST006N04NM6AUMA1

Datasheet

Analog & Power

MOSFET N-CH 40V 58A/475A HSOF-5

Active5-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.6mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8800 pF @ 20 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C58A (Ta), 475A (Tc)
Max Power Dissipation3.8W (Ta), 250W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case5-PowerSFN
Supplier Device PackagePG-HSOF-5-1

Environmental

Operating Temperature-55°C~175°C(TJ)