ISC110N12NM6ATMA1

Infineon Technologies

ISC110N12NM6ATMA1

Datasheet

Analog & Power

TRENCH >=100V

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 26A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 60 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 35µA

Electrical

Drain-to-Source Voltage120 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 62A (Tc)
Max Power Dissipation3W (Ta), 94W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)