ISC080N10NM6ATMA1

Infineon Technologies

ISC080N10NM6ATMA1

Datasheet

Analog & Power

TRENCH >=100V PG-TDSON-8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.05mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 36µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 75A (Tc)
Max Power Dissipation3W (Ta), 100W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8 FL

Environmental

Operating Temperature-55°C ~ 175°C (TJ)