ISC0806NLSATMA1

Infineon Technologies

ISC0806NLSATMA1

Datasheet

Analog & Power

MOSFET N-CH 100V 16A/97A TDSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.4mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 61µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 97A (Tc)
Max Power Dissipation2.5W (Ta), 96W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-7

Environmental

Operating Temperature-55°C ~ 150°C (TJ)