ISC0804NLSATMA1

Infineon Technologies

ISC0804NLSATMA1

Datasheet

Analog & Power

MOSFET N-CH 100V 12A/59A TDSON-8

Obsolete8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.9mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
Series448
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 28µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 59A (Tc)
Max Power Dissipation2.5W (Ta), 60W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)