ISC073N12LM6ATMA1

Infineon Technologies

ISC073N12LM6ATMA1

Datasheet

Analog & Power

OPTIMOS 6 POWER-TRANSISTOR,120V

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.3mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 60 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 50µA

Electrical

Drain-to-Source Voltage120 V
Drive Voltage (Max Rds On, Min Rds On)3.3V, 10V
Current - Continuous Drain (Id) @ 25°C13.4A (Ta), 86A (Tc)
Max Power Dissipation3W (Ta), 125W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)