ISC0703NLSATMA1

Infineon Technologies

ISC0703NLSATMA1

Datasheet

Analog & Power

MOSFET N-CH 60V 13A/57A TDSON-8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.9mOhm @ 32A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 15µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 57A (Tc)
Max Power Dissipation3W (Ta), 44W (Tc)

Mechanical

Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)