IRS2008MPBFAUMA1

Infineon Technologies

IRS2008MPBFAUMA1

Datasheet

Analog & Power

LEVEL SHIFT JUNCTION ISO

Active14-VFQFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberIRS2008
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, N-Channel MOSFET
Input TypeCMOS
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Number of Drivers1
Product StatusActive
Rise / Fall Time (Typ)70ns, 30ns

Electrical

Current - Peak Output (Source, Sink)290mA, 600mA
High Side Voltage - Max (Bootstrap)200 V
Logic Voltage - VIL, VIH0.8V, 2.5V
Supply Voltage10V ~ 20V

Mechanical

PackageTape & Reel (TR)
Package / Case14-VFQFN Exposed Pad
Supplier Device Package14-MLPQ (4x4)

Environmental

Operating Temperature-40°C ~ 125°C (TA)