Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Max Power Dissipation | 3.8W (Ta), 110W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C~175°C(TJ) |
|---|