Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4880 pF @ 15 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Not For New Designs |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Max Power Dissipation | 135W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | IPAK (TO-251AA) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|