IRLMS2002

Infineon Technologies

IRLMS2002

Datasheet

Analog & Power

MOSFET N-CH 20V 6.5A MICRO6

ObsoleteSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 4.5V
Base Product NumberIRLMS200
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1310 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTube
Package / CaseSOT-23-6
Supplier Device PackageMicro6™(SOT23-6)