Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Max Power Dissipation | 1.3W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|