IRLHS6376TRPBF

Infineon Technologies

IRLHS6376TRPBF

Datasheet

Analog & Power

MOSFET 2N-CH 30V 3.6A 6PQFN

Active6-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs63mOhm @ 3.4A, 4.5V
Base Product NumberIRLHS6376
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 10µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3.6A
Power - Max1.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerVDFN
Supplier Device Package6-PQFN Dual (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)