IRLHM620TR2PBF

Infineon Technologies

IRLHM620TR2PBF

Datasheet

Analog & Power

MOSFET N-CH 20V 26A PQFN

Obsolete8-VQFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3620 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 50µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C26A (Ta), 40A (Tc)

Mechanical

PackageCut Tape (CT)
Package / Case8-VQFN Exposed Pad
Supplier Device PackagePQFN (3x3)