Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 35A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Max Power Dissipation | 130W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
| Supplier Device Package | TO-263-5 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|