Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4mOhm @ 110A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7660 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Max Power Dissipation | 300W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-273AA |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|