IRL80HS120

Infineon Technologies

IRL80HS120

Datasheet

Analog & Power

MOSFET N-CH 80V 12.5A 6PQFN

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 10µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12.5A (Tc)
Max Power Dissipation11.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-PQFN (2x2)

Environmental

Operating Temperature-55°C~175°C(TJ)