IRL40T209ATMA1

Infineon Technologies

IRL40T209ATMA1

Datasheet

Analog & Power

MOSFET N-CH 40V 300A 8HSOF

Obsolete8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.72mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 20 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-1

Environmental

Operating Temperature-55°C ~ 175°C (TJ)