IRL100HS121

Infineon Technologies

IRL100HS121

Datasheet

Analog & Power

MOSFET N-CH 100V 11A 6PQFN

Active6-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 6.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 10µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation11.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerVDFN
Supplier Device Package6-PQFN (2x2) (DFN2020)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)