IRFSL4127PBF

Infineon Technologies

IRFSL4127PBF

Datasheet

Analog & Power

MOSFET N-CH 200V 72A TO262

ActiveTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 44A, 10V
Base Product NumberIRFSL4127
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5380 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

Environmental

Operating Temperature-55°C ~ 175°C (TJ)