IRFP7537PBF

Infineon Technologies

IRFP7537PBF

Datasheet

Analog & Power

MOSFET N-CH 60V 172A TO247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.3mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7020 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesHEXFET®, StrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.7V @ 150µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C172A (Tc)
Max Power Dissipation230W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247

Environmental

Operating Temperature-55°C ~ 175°C (TJ)