Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 25mOhm @ 17A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Max Power Dissipation | 46W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220AB Full-Pak |
| Operating Temperature | -40°C~150°C(TJ) |
|---|