IRFHS9351TRPBF

Infineon Technologies

IRFHS9351TRPBF

Datasheet

Analog & Power

MOSFET 2P-CH 30V 2.3A PQFN

Active6-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 3.1A, 10V
Base Product NumberIRFHS9351
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 10µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C2.3A
Power - Max1.4W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerVDFN
Supplier Device Package6-PQFN Dual (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)