IRFHM8363TR2PBF

Infineon Technologies

IRFHM8363TR2PBF

Datasheet

Analog & Power

MOSFET 2N-CH 30V 11A 8PQFN

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.9mOhm @ 10A, 10V
Base Product NumberIRFHM8363
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1165pF @ 10V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 25µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C11A
Power - Max2.7W

Mechanical

PackageCut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN-Dual (3.3x3.3)