IRFHM8326TRPBF

Infineon Technologies

IRFHM8326TRPBF

Datasheet

Analog & Power

MOSFET N-CH 30V 25A PQFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.7mOhm @ 20A, 10V
Base Product NumberIRFHM8326
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2496 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 50µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Max Power Dissipation2.8W (Ta), 37W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN

Environmental

Operating Temperature-55°C ~ 150°C (TJ)