IRFHM830DTR2PBF

Infineon Technologies

IRFHM830DTR2PBF

Datasheet

Analog & Power

MOSFET N-CH 30V 20A PQFN

Obsolete8-VQFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1797 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 50µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 40A (Tc)

Mechanical

PackageCut Tape (CT)
Package / Case8-VQFN Exposed Pad
Supplier Device PackagePQFN (3x3)