IRFHM792TRPBF

Infineon Technologies

IRFHM792TRPBF

Datasheet

Analog & Power

MOSFET 2N-CH 100V 2.3A 8PQFN

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs195mOhm @ 2.9A, 10V
Base Product NumberIRFHM792
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds251pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 10µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C2.3A
Power - Max2.3W

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN (3.3x3.3), Power33

Environmental

Operating Temperature-55°C ~ 150°C (TJ)