IRFHE4250DTRPBF

Infineon Technologies

IRFHE4250DTRPBF

Analog & Power

MOSFET 2N-CH 25V 86A/303A 32QFN

Obsolete32-PowerWFQFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.75mOhm @ 27A, 10V
Base Product NumberIRFHE4250
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1735pF @ 13V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesFASTIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 35µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C86A, 303A
Power - Max156W

Mechanical

PackageTape & Reel (TR)
Package / Case32-PowerWFQFN
Supplier Device Package32-PQFN (6x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)