IRFH7882TRPBF

Infineon Technologies

IRFH7882TRPBF

Analog & Power

MOSFET N-CH 80V 26A 8PQFN

Obsolete8-VQFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.1mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3186 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesFASTIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C26A (Ta)
Max Power Dissipation4W (Ta), 195W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-VQFN
Supplier Device Package8-PQFN (5x6)

Environmental

Operating Temperature-55°C~150°C(TJ)