IRFH6200TR2PBF

Infineon Technologies

IRFH6200TR2PBF

Datasheet

Analog & Power

MOSFET N-CH 20V 100A 5X6 PQFN

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.95mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds10890 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 150µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C49A (Ta), 100A (Tc)

Mechanical

PackageCut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN (5x6)