IRFH5220TR2PBF

Infineon Technologies

IRFH5220TR2PBF

Datasheet

Analog & Power

MOSFET N-CH 200V 3.8A PQFN

Obsolete8-VQFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs99.9mOhm @ 5.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 100µA

Electrical

Drain-to-Source Voltage200 V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 20A (Tc)

Mechanical

PackageCut Tape (CT)
Package / Case8-VQFN Exposed Pad
Supplier Device PackagePQFN (5x6)