IRFH5210TR2PBF

Infineon Technologies

IRFH5210TR2PBF

Datasheet

Analog & Power

MOSFET N-CH 100V 10A 5X6 PQFN

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.9mOhm @ 33A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2570 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 100µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 55A (Tc)

Mechanical

PackageCut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN (5x6)