IRFH4257DTRPBF

Infineon Technologies

IRFH4257DTRPBF

Datasheet

Analog & Power

MOSFET 2N-CH 25V 25A PQFN

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Base Product NumberIRFH4257
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1321pF @ 13V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 35µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C25A
Power - Max25W, 28W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackageDual PQFN (5x4)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)