IRF8513PBF

Infineon Technologies

IRF8513PBF

Datasheet

Analog & Power

MOSFET 2N-CH 30V 8A/11A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.5mOhm @ 8A, 10V
Base Product NumberIRF8513
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds766pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 25µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C8A, 11A
Power - Max1.5W, 2.4W

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 175°C (TJ)