Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Max Power Dissipation | 1.8W (Ta) |
| Package | Tube |
|---|---|
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package | Micro8™ |