IRF7389PBF

Infineon Technologies

IRF7389PBF

Datasheet

Analog & Power

MOSFET N/P-CH 30V 8SO

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs29mOhm @ 5.8A, 10V
Base Product NumberIRF738
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusDiscontinued at
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Power - Max2.5W

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)