IRF7342PBF

Infineon Technologies

IRF7342PBF

Datasheet

Analog & Power

MOSFET 2P-CH 55V 3.4A 8SO

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 3.4A, 10V
Base Product NumberIRF734
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusDiscontinued at
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage55V
Current - Continuous Drain (Id) @ 25°C3.4A
Power - Max2W

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)