IRF7341GTRPBF

Infineon Technologies

IRF7341GTRPBF

Datasheet

Analog & Power

MOSFET 2N-CH 55V 5.1A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 5.1A, 10V
Base Product NumberIRF734
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage55V
Current - Continuous Drain (Id) @ 25°C5.1A
Power - Max2.4W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 175°C (TJ)