IRF7338PBF

Infineon Technologies

IRF7338PBF

Analog & Power

MOSFET N/P-CH 12V 6.3A/3A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs34mOhm @ 6A, 4.5V
Base Product NumberIRF733
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 9V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage12V
Current - Continuous Drain (Id) @ 25°C6.3A, 3A
Power - Max2W

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)