Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 35A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5435 pF @ 13 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Drain-to-Source Voltage | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 213A (Tc) |
| Max Power Dissipation | 2.1W (Ta), 78W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | DirectFET™ Isometric MX |
| Supplier Device Package | DIRECTFET™ MX |
| Operating Temperature | -40°C ~ 150°C (TJ) |
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