IRF6723M2DTR1P

Infineon Technologies

IRF6723M2DTR1P

Analog & Power

MOSFET 2N-CH 30V 15A DIRECTFETMA

ObsoleteDirectFET™ Isometric MAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.6mOhm @ 15A, 10V
Base Product NumberIRF6723
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 25µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C15A
Power - Max2.7W

Mechanical

PackageTape & Reel (TR)
Package / CaseDirectFET™ Isometric MA
Supplier Device PackageDIRECTFET™ MA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)