IRF5852TR

Infineon Technologies

IRF5852TR

Analog & Power

MOSFET 2N-CH 20V 2.7A 6TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 2.7A, 4.5V
Base Product NumberIRF58
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C2.7A
Power - Max960mW

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)