IRF5804

Infineon Technologies

IRF5804

Analog & Power

MOSFET P-CH 40V 2.5A MICRO6

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs198mOhm @ 2.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTube
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageMicro6™(TSOP-6)