IRF5802TR

Infineon Technologies

IRF5802TR

Analog & Power

MOSFET N-CH 150V 0.9A 6-TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)

Mechanical

PackageCut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageMicro6™(TSOP-6)