IRF5802

Name: IRF5802
Brand: Infineon Technologies

Analog & Power

MOSFET N-CH 150V 900MA MICRO6

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	1.2Ohm @ 540mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 25 V
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Product Status	Obsolete
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5.5V @ 250µA

Drain-to-Source Voltage	150 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Max Power Dissipation	2W (Ta)